BFP360W
NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation For low noise amplifiers For...
BFP360W
NPN Silicon RF
Transistor Preliminary data
Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP360W
Maximum Ratings Parameter
Marking Pin Configuration FBs 1=E 2=C 3=E 4=B Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS
Package SOT343
Value Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1)
TS 95°C
6 15 15 2 35 4 210 150 -65 ... 150 -65 ... 150
Value
V
mA mW °C
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Parameter
Unit
Junction - soldering point2)
260
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
1
Jun-16-2003
BFP360W
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Symbol min. Values typ. max. Unit
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO ICES ICBO IEBO hFE
6 60
9 130
10 100 1 200
V µA nA µA -
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 15 mA, VCE = 3 V
2
Jun-16-2003
BFP360W
Electri...
