SIEGET® 25
NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1....
SIEGET® 25
NPN Silicon RF
Transistor For low current applications For oscillators up to 12 GHz Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metalization for high reliability SIEGET ® 25 - Line Siemens Grounded Emitter
Transistor 25 GHz f T - Line
BFP 405
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP 405
Marking Ordering Code ALs Q62702-F1592
Pin Configuration 1=B 2=E 3=C 4=E
Package SOT-343
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, T S ≤ 120 °C Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point
1)
Symbol
Value 4.5 15 1.5 12 1 55 150 -65 ...+150 -65 ...+150
≤ 530
Unit V
VCEO VCBO VEBO IC IB Ptot Tj TA T stg
RthJS
mA mW °C
K/W
1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11
Sep-09-1998 1998-11-01
BFP 405
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 5 mA, V CE = 4 V typ. 5 90 max. 6.5 150 15 150 V nA µA -
Unit
V(BR)CEO I CBO I EBO hFE
4.5 50
AC character...
