Low Noise Silicon Bipolar RF Transistor
• For low current applications • For oscillators up to 12 GHz • Minimum noise fi...
Low Noise Silicon Bipolar RF
Transistor
For low current applications For oscillators up to 12 GHz Minimum noise figure NFmin = 1.25 dB at 1.8 GHz
Outstanding Gms = 23 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free package
with visible leads Qualification report according to AEC-Q101 available
3 4
BFP405
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP405
Marking
Pin Configuration
ALs 1=B 2=E 3=C 4=E -
-
Package SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage
Collector current Base current Total power dissipation1) TS ≤ 110 °C Junction temperature Ambient temperature
Storage temperature
VCEO
VCES VCBO VEBO IC IB Ptot
TJ TA TStg
1TS is measured on the emitter lead at the soldering point to the pcb
Value
4.5 4.1 15 15 1.5 25 3 75
150 -65 ... 150 -65 ... 150
Unit V
mA mW °C
1 2013-09-19
BFP405
Thermal Resistance Parameter Junction - soldering point1)
Symbol RthJS
Value 530
Unit K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 5 mA, VCE ...