BFP520

Low Noise Silicon Bipolar RF Transistor Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage Common e.g. in cordless phones, satellite receivers and oscillators up to 22 GHz High gain and low noise at high frequencies due to high transit frequency fT = 45 GHz Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads Qualification report according to AEC-Q101 available BFP520 3 4 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP520 Marking Pin Configuration APs 1=B 2=E 3=C 4=E - - Package SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 105 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 1TS is measured on the emitter lead at the soldering point to pcb Value 2.5 2.4 10 10 1 50 5 125 150 -55 ... 150 Unit V mA mW °C 1 2015-10-12 BFP520 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 450 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 2 V, VBE = 0 VCE = 10 V,...