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Power MOSFET. MCP87130 Datasheet

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Power MOSFET. MCP87130 Datasheet






MCP87130 MOSFET. Datasheet pdf. Equivalent




MCP87130 MOSFET. Datasheet pdf. Equivalent





Part

MCP87130

Description

High-Speed N-Channel Power MOSFET



Feature


MCP87130 High-Speed N-Channel Power MOSF ET Features: • Low Drain-to-Source O n Resistance (RDS(ON)) • Low Total Ga te Charge (QG) and Gate-to-Drain Charge (QGD) • Low Series Gate Resistance ( RG) • Capable of Short Dead-Time Oper ation • RoHS Compliant Applications: • Point-of-Load DC-DC Converters • High Efficiency Power Management in Ser vers, Networking, and Automotive.
Manufacture

Microchip

Datasheet
Download MCP87130 Datasheet


Microchip MCP87130

MCP87130; Applications Description: The MCP87130 is an N-Channel power MOSFET in a popu lar PDFN 5 mm x 6 mm package as well as a PDFN 3.3 mm x 3.3 mm package. Advanc ed packaging and silicon processing tec hnologies allow the MCP87130 to achieve a low QG for a given RDS(ON) value, re sulting in a low Figure of Merit (FOM). Combined with low RG, the low FOM of t he MCP87130 allows.


Microchip MCP87130

high efficiency power conversion with r educed switching and conduction losses. Package Type PDFN 5 x 6 PDFN 3.3 x 3.3 S1 8D S 2 7D S3 6D G 4 5D Pr oduct Summary Table: Unless otherwise i ndicated, TA = +25˚C. Parameters Sym . Min. Typ. .


Microchip MCP87130

.

Part

MCP87130

Description

High-Speed N-Channel Power MOSFET



Feature


MCP87130 High-Speed N-Channel Power MOSF ET Features: • Low Drain-to-Source O n Resistance (RDS(ON)) • Low Total Ga te Charge (QG) and Gate-to-Drain Charge (QGD) • Low Series Gate Resistance ( RG) • Capable of Short Dead-Time Oper ation • RoHS Compliant Applications: • Point-of-Load DC-DC Converters • High Efficiency Power Management in Ser vers, Networking, and Automotive.
Manufacture

Microchip

Datasheet
Download MCP87130 Datasheet




 MCP87130
MCP87130
High-Speed N-Channel Power MOSFET
Features:
• Low Drain-to-Source On Resistance (RDS(ON))
• Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD)
• Low Series Gate Resistance (RG)
• Capable of Short Dead-Time Operation
• RoHS Compliant
Applications:
• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers,
Networking, and Automotive Applications
Description:
The MCP87130 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package as well as a
PDFN 3.3 mm x 3.3 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87130 to achieve a low QG for a given RDS(ON)
value, resulting in a low Figure of Merit (FOM).
Combined with low RG, the low FOM of the MCP87130
allows high efficiency power conversion with reduced
switching and conduction losses.
Package Type
PDFN 5 x 6
PDFN 3.3 x 3.3
S1
8D
S 2 7D
S3
6D
G 4 5D
Product Summary Table: Unless otherwise indicated, TA = +25˚C.
Parameters
Sym. Min. Typ. Max. Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
Total Gate Charge
Gate-to-Drain Charge
Series Gate Resistance
BVDSS 25 — —
V VGS = 0V, ID = 250 µA
VGS(TH) 1.1 1.35 1.7
V VDS = VGS, ID = 250 µA
RDS(ON) — 13.8 16.5 mVGS = 4.5V, ID = 10A
— 11.3 13.5 mVGS = 10V, ID = 10A
QG
QGD
— 5.5 8
— 2.6 —
nC VDS = 12.5V, ID = 10A,
VGS = 4.5V
nC VDS = 12.5V, ID = 10A
RG
— 1.7 —
Thermal Characteristics
Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN
RθJX
— — 73 °C/W Note 1
Thermal Resistance Junction-to-Case, 8L 3.3x3.3-PDFN
RθJC
— — 3.3 °C/W Note 2
Thermal Resistance Junction-to-X, 8L 5x6-PDFN
RθJX
— — 58 °C/W Note 1
Thermal Resistance Junction-to-Case, 8L 5x6-PDFN
RθJC
— — 3.3 °C/W Note 2
Note 1: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 2 oz. cop-
per. This characteristic is dependent on user’s board design.
2: RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
2013 Microchip Technology Inc.
DS20005159B-page 1




 MCP87130
MCP87130
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDS .......................................................................+25V
VGS........................................................... +10.0V / -8V
ID, Continuous ..............................................................
8L 5x6-PDFN ............................. 43A, TC = +25°C
8L 3.3x3.3-PDFN ....................... 43A, TC = +25°C
PD .................................................................................
8L 5x6-PDFN ........................... 2.1W, TA = +25°C
8L 3.3x3.3-PDFN .......... ...........1.7W, TA = +25°C
TJ, TSTG.............................................. -55˚C to +150˚C
EAS Avalanche Energy ....................................... 50 mJ
ID = 10A, L = 1 mH, RG = 25
† Notice: Stresses above those listed under
“Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C
Parameters
Sym. Min. Typ. Max.
Units
Conditions
Static Characteristics
Drain-to-Source
Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Drain Charge
Gate-to-Source Charge
Gate Charge at VGS(TH)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Series Gate Resistance
gfs
CISS
COSS
CRSS
QG
QGD
QGS
QG(TH)
QOSS
td(on)
tr
td(off)
tf
RG
25
1.1
——
—1
— 100
1.35 1.7
17.3 —
13.8 16.5
11.3 13.5
40 —
400 —
200 —
60 —
5.5 8
2.6 —
0.9 —
0.6 —
3.7 —
2.2 —
5.4 —
4.2 —
2.1 —
1.7 —
V VGS = 0V, ID = 250 µA
µA VGS = 0V, VDS = 20V
nA VDS = 0V, VGS = 10V/-8V
V VDS = VGS, ID = 250 µA
mVGS = 3.3V, ID = 10A
mVGS = 4.5V, ID = 10A
mVGS = 10V, ID = 10A
S VDS = 12.5V, ID = 10A
pF VGS = 0V, VDS = 12.5V, f = 1 MHz
pF VGS = 0V, VDS = 12.5V, f = 1 MHz
pF VGS = 0V, VDS = 12.5V, f = 1 MHz
nC VDS = 12.5V, ID = 10A, VGS = 4.5V
nC VDS = 12.5V, ID = 10A
nC VDS = 12.5V, ID = 10A
nC VDS = 12.5V, ID = 10A
nC VDS = 12.5V, VGS = 0
ns VDS = 12.5V, VGS = 4.5V,
ID = 10A, RG = 2
ns VDS = 12.5V, VGS = 4.5V,
ID = 10A, RG = 2
ns VDS = 12.5V, VGS = 4.5V,
ID = 10A, RG = 2
ns VDS = 12.5V, VGS = 4.5V,
ID = 10A, RG = 2
DS20005159B-page 2
2013 Microchip Technology Inc.




 MCP87130
MCP87130
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C
Parameters
Sym. Min. Typ. Max. Units
Conditions
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Charge
Reverse Recovery Time
Avalanche Characteristics
Avalanche Energy
VFD
QRR
trr
— 0.8
1
—7—
— 9.5 —
V IS = 10A, VGS = 0V
nC IS = 10A, di/dt = 300 A/µs
nS IS = 10A, di/dt = 300 A/µs
EAS 4.5 — — mJ ID = 3A, L = 1 mH,
RG = 25
TEMPERATURE CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C
Parameters
Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Operating Junction Temperature Range
Storage Temperature Range
TJ -55 — 150 °C
TA -55 — 150 °C
Package Thermal Resistances
Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN RθJX
73 °C/W Note 1
Thermal Resistance Junction-to-Case,
8L 3.3x3.3-PDFN
RθJC
3.3 °C/W Note 2
Thermal Resistance Junction-to-X, 8L 5x6-PDFN
RθJX
58 °C/W Note 1
Thermal Resistance Junction-to-Case, 8L 5x6-PDFN RθJC — — 3.3 °C/W Note 2
Note 1: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
2: RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
2013 Microchip Technology Inc.
DS20005159B-page 3



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