Low Noise SiGe:C Bipolar RF Transistor
• Highly linear low noise RF transistor • Provides outstanding performance
for a ...
Low Noise SiGe:C Bipolar RF
Transistor
Highly linear low noise RF
transistor Provides outstanding performance
for a wide range of wireless applications Based on Infineon's reliable high volume
Silicon Germanium technology
Ideal for CDMA and WLAN applications Collector design provides high linearity of
14.5 dBm OP1dB for low voltage application Maximum stable gain
Gms = 21.5 dB at 1.8 GHz Gma = 11 dB at 6 GHz Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz Outstanding noise figure NFmin = 1.3 dB at 6 GHz Accurate SPICE GP model enables effective design in process Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available
3 4
BFP620
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP620
Marking
Pin Configuration
R2s 1=B 2=E 3=C 4=E -
-
Package SOT343
1 2013-09-13
BFP620
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage
Collector current Base current Total power dissipation1) TS ≤ 95°C Junction temperature Ambient temperature
Storage temperature
VCEO
VCES VCBO VEBO IC IB Ptot
TJ TA TStg
Value
2.3 2.1 7.5 7.5 1.2 80 3 185
150 -65 ... 150 -65 ... 150
Unit V
mA mW °C
Thermal Resistance Parameter Junction - soldering point2)
Symbol RthJS
Value 300
Unit K/W
Electrical Characteristics at TA = 25 °C,...
