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Op Amps. MCP6494 Datasheet

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Op Amps. MCP6494 Datasheet






MCP6494 Amps. Datasheet pdf. Equivalent




MCP6494 Amps. Datasheet pdf. Equivalent





Part

MCP6494

Description

Low-Input Bias Current Op Amps



Feature


MCP6491/2/4 7.5 MHz, Low-Input Bias Curr ent Op Amps Features • Low-Input Bia s Current - 150 pA (typical, TA = +125 C) • Low Quiescent Current - 530 µA /amplifier (typical) • Low-Input Offs et Voltage - ±1.5 mV (maximum) • Sup ply Voltage Range: 2.4V to 5.5V • Rai l-to-Rail Input/Output • Gain Bandwid th Product: 7.5 MHz (typical) • Slew Rate: 6 V/µs (typical) • Unity Gain.
Manufacture

Microchip

Datasheet
Download MCP6494 Datasheet


Microchip MCP6494

MCP6494; Stable • No Phase Reversal • Small Packages - Singles in SC70-5, SOT-23-5 • Extended Temperature Range - -40°C to +125°C Applications • Photodiode Amplifier • pH Electrode Amplifier Low Leakage Amplifier • Piezoelect ric Transducer Amplifier • Active Ana log Filter • Battery-Powered Signal C onditioning Description The Microchip MCP6491/2/4 family of operational ampl.


Microchip MCP6494

ifiers (op amps) has low-input bias curr ent (150 pA, typical at 125°C) and rai l-to-rail input and output operation. T his family is unity gain stable and has a gain bandwidth product of 7.5 MHz (t ypical). These devices o .


Microchip MCP6494

.

Part

MCP6494

Description

Low-Input Bias Current Op Amps



Feature


MCP6491/2/4 7.5 MHz, Low-Input Bias Curr ent Op Amps Features • Low-Input Bia s Current - 150 pA (typical, TA = +125 C) • Low Quiescent Current - 530 µA /amplifier (typical) • Low-Input Offs et Voltage - ±1.5 mV (maximum) • Sup ply Voltage Range: 2.4V to 5.5V • Rai l-to-Rail Input/Output • Gain Bandwid th Product: 7.5 MHz (typical) • Slew Rate: 6 V/µs (typical) • Unity Gain.
Manufacture

Microchip

Datasheet
Download MCP6494 Datasheet




 MCP6494
MCP6491/2/4
7.5 MHz, Low-Input Bias Current Op Amps
Features
• Low-Input Bias Current
- 150 pA (typical, TA = +125°C)
• Low Quiescent Current
- 530 µA/amplifier (typical)
• Low-Input Offset Voltage
- ±1.5 mV (maximum)
• Supply Voltage Range: 2.4V to 5.5V
• Rail-to-Rail Input/Output
• Gain Bandwidth Product: 7.5 MHz (typical)
• Slew Rate: 6 V/µs (typical)
• Unity Gain Stable
• No Phase Reversal
• Small Packages
- Singles in SC70-5, SOT-23-5
• Extended Temperature Range
- -40°C to +125°C
Applications
• Photodiode Amplifier
• pH Electrode Amplifier
• Low Leakage Amplifier
• Piezoelectric Transducer Amplifier
• Active Analog Filter
• Battery-Powered Signal Conditioning
Description
The Microchip MCP6491/2/4 family of operational
amplifiers (op amps) has low-input bias current
(150 pA, typical at 125°C) and rail-to-rail input and
output operation. This family is unity gain stable and
has a gain bandwidth product of 7.5 MHz (typical).
These devices operate with a single-supply voltage as
low as 2.4V, while only drawing 530 µA/amplifier
(typical) of quiescent current. These features make the
family of op amps well suited for photodiode amplifier,
pH electrode amplifier, low leakage amplifier, and
battery-powered signal conditioning applications, etc.
The MCP6491/2/4 family is offered in single
(MCP6491), dual (MCP6492), quad (MCP6494)
packages. All devices are designed using an advanced
CMOS process and fully specified in extended
temperature range from -40°C to +125°C.
Related Parts
• MCP6471/2/4: 2 MHz, Low-Input Bias Current Op
Amps
• MCP6481/2/4: 4 MHz, Low-Input Bias Current Op
Amps
Design Aids
• SPICE Macro Models
• FilterLab® Software
• MAPS (Microchip Advanced Part Selector)
• Analog Demonstration and Evaluation Boards
• Application Notes
Package Types
MCP6491
SC70, SOT-23
VOUT 1
VSS 2
VIN+ 3
5 VDD
4 VIN
MCP6492
SOIC, MSOP
VOUTA 1
VINA2
VINA+ 3
VSS 4
8 VDD
7 VOUTB
6 VINB
5 VINB+
* Includes Exposed Thermal Pad (EP); see Table 3-1.
MCP6492
2x3 TDFN*
MCP6494
SOIC, TSSOP
VOUTA 1
8 VDD VOUTA 1
VINA2 EP 7 VOUTB VINA2
VINA+ 3 9 6 VINBVINA+ 3
VSS 4
5 VINB+ VDD 4
VINB+ 5
VINB6
VOUTB 7
14 VOUTD
13 VIND
12 VIND+
11 VSS
10 VINC+
9 VINC
8 VOUTC
2012-2013 Microchip Technology Inc.
DS20002321C-page 1




 MCP6494
MCP6491/2/4
Typical Application
C2
R2
ID1
Light
VDD
D1 MCP649X
+
VOUT
Photodiode Amplifier
DS20002321C-page 2
2012-2013 Microchip Technology Inc.




 MCP6494
MCP6491/2/4
1.0 ELECTRICAL
CHARACTERISTICS
1.1 Absolute Maximum Ratings †
VDD – VSS ................................................................................................................................... ......................................................6.5V
Current at Input Pins ................................................................................................................ ......................................................±2 mA
Analog Inputs (VIN+, VIN-) (Note 1) .................................................................................................................VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ...........................................................................................................................VSS – 0.3V to VDD + 0.3V
Difference Input Voltage...........................................................................................................................................................VDD – VSS
Output Short-Circuit Current ................................................................................................................ ...................................continuous
Current at Output and Supply Pins ............................................................................................................... ..............................±60 mA
Storage Temperature ................................................................................................................ .....................................-65°C to +150°C
Maximum Junction Temperature (TJ) ................................................................................................................ ...........................+150°C
ESD protection on all pins (HBM)  4 kV
Note 1: See Section 4.1.2, Input Voltage Limits.
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
1.2 Specifications
TABLE 1-1: DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +2.4V to +5.5V, VSS = GND, TA = +25°C,
VCM = VDD/2, VOUT VDD/2, VL = VDD/2 and RL = 10 kto VL. (Refer to Figure 1-1).
Parameters
Sym
Min Typ Max Units
Conditions
Input Offset
Input Offset Voltage
VOS
-1.5
+1.5
mV VDD = 3.0V, VCM = VDD/4
Input Offset Drift with Temperature VOS/TA
±2.5
— µV/°C TA = -40°C to +125°C
Power Supply Rejection Ratio
PSRR
75
90
— dB VCM = VDD/4
Input Bias Current and Impedance
Input Bias Current
IB
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
IOS
ZCM
ZDIFF
— ±1 — pA
— 8 — pA TA = +85°C
— 150 350 pA TA = +125°C
— ±0.1 — pA
— 1013||6 — ||pF
— 1013||6 — ||pF
Common Mode Input Voltage
Range
VCMR VSS - 0.3 — VDD + 0.3 V
Common Mode Rejection Ratio
CMRR
65
84
— dB VCM = -0.3V to 2.7V,
VDD = 2.4V
70 88 — dB VCM = -0.3V to 5.8V,
VDD = 5.5V
Open-Loop Gain
DC Open-Loop Gain (Large Signal) AOL
95 115 — dB 0.2V < VOUT <(VDD – 0.2V)
VDD = 5.5V, VCM = VSS
2012-2013 Microchip Technology Inc.
DS20002321C-page 3



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