BFP620F

Low Noise SiGe:C Bipolar RF Transistor High gain low noise RF transistor Based on Infineon's reliable high volume Silicon Germanium technology Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz Outstanding noise figure NFmin = 1.3 dB at 6 GHz Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz Pb-free (RoHS compliant) and halogen-free thin small flat package (1.4 x 0.8 x 0.59 mm) with visible leads Qualification report according to AEC-Q101 available BFP620F 3 2 4 1 Top View 43 XYs 12 Direction of Unreeling ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP620F Marking Pin Configuration R2s 1=B 2=E 3=C 4=E - - Package TSFP-4 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO TA = 25 °C TA = -55 °C Collector-emitter voltage VCES Collector-base voltage VCBO Emitter-base voltage VEBO Collector current IC Base current Total power dissipati...