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DN2625

Microchip

N-Channel Depletion-Mode Vertical DMOS FET

DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features • Very Low Gate Threshold Voltag...


Microchip

DN2625

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Description
DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features Very Low Gate Threshold Voltage Designed to be Source-driven Low Switching Losses Low Effective Output Capacitance Designed for Inductive Loads Applications Medical Ultrasound Beamforming Ultrasonic Array-focusing Transmitter Piezoelectric Transducer Waveform Drivers High-speed Arbitrary Waveform Generator Normally-on Switches Solid-state Relays Constant Current Sources Power Supply Circuits General Description The DN2625 is a low-threshold Depletion-mode (normally-on) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device...




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