DN2625
N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options
Features
• Very Low Gate Threshold Voltag...
DN2625
N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options
Features
Very Low Gate Threshold Voltage Designed to be Source-driven Low Switching Losses Low Effective Output Capacitance Designed for Inductive Loads
Applications
Medical Ultrasound Beamforming Ultrasonic Array-focusing Transmitter Piezoelectric Transducer Waveform Drivers High-speed Arbitrary Waveform Generator Normally-on Switches Solid-state Relays Constant Current Sources Power Supply Circuits
General Description
The DN2625 is a low-threshold Depletion-mode (normally-on)
transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar
transistors as well as the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device...