DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ151 PNP video transistor
Product specification File under Discrete Semiconductors...
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ151
PNP video
transistor
Product specification File under Discrete Semiconductors, SC05 1997 Sep 19
Philips Semiconductors
Product specification
PNP video
transistor
FEATURES High gain bandwidth Good thermal stability Gold metallization ensures excellent reliability. APPLICATIONS Pre-stage driver between video amplifier and video module. DESCRIPTION
PNP video
transistor in a SOT54 plastic package.
page
BFQ151
1
PINNING PIN 1 2 3 base collector emitter DESCRIPTION
2 3
MSB033
Fig.1 Simplified outline SOT54.
QUICK REFERENCE DATA SYMBOL VCBO IC Ptot fT Cre Tj PARAMETER collector-base voltage collector current (DC) total power dissipation transition frequency feedback capacitance junction temperature Ts ≤ 60 °C IC = −70 mA; VCE = −10 V IC = 0; VCB = −10 V CONDITIONS open emitter − − − 3.5 1.8 − TYP. MAX. −20 −100 1.25 − − 175 V mA W GHz pF °C UNIT
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 60 °C; note 1; see Fig.2 open base open collector CONDITIONS open emitter − − − − − −65 − MIN. MAX. −20 −15 −3 −100 1.25 +150 175 V V V mA W °C °C UNIT
1997 Sep 19
2
Philips Semiconductors
Product specification
PNP vi...