BFQ17

DISCRETE SEMICONDUCTORS DATA SHEET BFQ17 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor DESCRIPTION NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The transistor has extremely good intermodulation properties and a high power gain. PINNING PIN 1 2 3 DESCRIPTION Code: FA emitter collector base 1 Bottom view 2 page BFQ17 3 MBK514 Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot fT Cre PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation transition frequency feedback capacitance up to Ts = 145 °C (note 1) IC = 150 mA; VCE = 15 V; f = 500 MHz; Tj = 25 °C IC = 10 mA; VCE = 15 V; f = 1 MHz; Tamb = 25 °C open base CONDITIONS open emitter TYP. MAX. UNIT − − − − 1.5 1.9 40 25 300 1 − − V V mA W GHz pF LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC ICM Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature f > 1 MHz up to Ts = 145 °C (note 1) open emitter RBE ≤ 50 Ω open base open collector CONDITIONS MIN. − − − − − − − −65 − MAX....