BFQ19S

Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available 1 2 3 BFQ19S 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFQ19S Marking Pin Configuration FG 1=B 2=C 3=E Package SOT89 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 85°C Junction temperature Ambient temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TA 15 20 20 3 120 12 1 150 -65 ... 150 Storage temperature TStg -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 65 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA W °C Unit K/W 1 2014-04-03 BFQ19S Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC cur...