BFQ221

DISCRETE SEMICONDUCTORS DATA SHEET BFQ221 NPN video transistor Product specification Supersedes data of 1996 July 18 File under Discrete Semiconductors, SC05 1996 Sep 04 Philips Semiconductors Product specification NPN video transistor APPLICATIONS Primarily intended for buffer stages in high resolution colour monitors. DESCRIPTION NPN silicon transistor encapsulated in a 3-lead plastic SOT54 package. PINNING PIN 1 2 3 base collector emitter DESCRIPTION 1 2 3 BFQ221 MSB033 Fig.1 Simplified outline SOT54. QUICK REFERENCE DATA SYMBOL VCBO IC Ptot fT Cre Tj PARAMETER collector-base voltage collector current (DC) total power dissipation transition frequency feedback capacitance junction temperature up to Ts = 60 °C IC = 25 mA; VCE = 10 V IC = 0; VCB = 10 V CONDITIONS open emitter − − − 1 1.7 − TYP MAX 100 100 1.15 − − 150 V mA W GHz pF °C UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VEBO IC IC(AV) Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter RBE = 100 Ω open collector see Fig.2 see Fig.2 up to Ts = 60 °C; note 1; see Fig.3 − − − − − − −65 − MIN 95 3 100 100 1.15 +150 150 MAX 100 V V V mA mA W °C °C UNIT 1996 Sep 04 2 Philips Semiconductors Product speci...