Document
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D066
BFQ235A NPN video transistor
Product specification Supersedes data of 1997 Oct 02 1998 Oct 06
Discrete Semiconductors
Product specification
NPN video transistor
FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • CRT amplifier buffer/driver in high-resolution colour graphics monitors. DESCRIPTION NPN video transistor in a SOT128B (TO-202) plastic package. PNP complement: BFQ255A. PINNING PIN 1 2 3 DESCRIPTION emitter collector base
1 2 3
BFQ235A
fpage
MGA323
Fig.1
Simplified outline (SOT128B; TO-202).
QUICK REFERENCE DATA SYMBOL VCBO VCER IC Ptot hFE fT Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCER VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. 1998 Oct 06 2 PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 100 °C; note 1; see Fig.3 open base RBE = 100 Ω open collector CONDITIONS open emitter − − − − − − −65 − MIN. 95 110 3 300 3 +150 175 MAX. 115 V V V V mA W °C °C UNIT PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Ts ≤ 100 °C; note 1 IC = 50 mA; VCE = 10 V; Tamb = 25 °C IC = 50 mA; VCE = 10 V; Tamb = 25 °C CONDITIONS open emitter RBE = 100 Ω − − − − 20 0.8 MIN. − − − − 35 1.2 TYP. MAX. 115 110 300 3 − − GHz UNIT V V mA W
Discrete Semiconductors
Product specification
NPN video transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)CER V(BR)EBO ICES ICBO hFE fT Ccb PARAMETER collector-base breakdown voltage CONDITIONS IC = 0.1 mA; IE = 0 MIN. 115 95 110 3 − − PARAMETER CONDITIONS
BFQ235A
VALUE 25
UNIT K/W
thermal resistance from junction to soldering point Ts ≤ 100 °C; note 1
TYP. MAX. UNIT − − − − − − 35 1.2 2 − − − − 100 20 − − − GHz pF V V V V µA µA
collector-emitter breakdown voltage IC = 10 mA; IB = 0 collector-emitter breakdown voltage IC = 10 mA; RBE = 100 Ω emitter-base breakdown voltage collector cut-off current collector cut-off current DC current gain transition frequency collector-base capacitance IE = 0.1 mA; IC = 0 IB = 0; VCE = 50 V IE = 0; VCB = 50 V
IC = 50 mA; VCE = 10 V; Tamb = 25 °C; 20 see Fig.4 IC = 50 mA; VCE = 10 V; f = 100 MHz; Tamb = 25 °C; see Fig.6 IC = 0; VCB = 10 V; f = 1 MHz; Tamb = 25 °C; see Fig.5 0.8 −
handbook, halfpage
400
MBB887
handbook, halfpage
4
MBB888
IC (mA) 300
Ptot (W) 3
200
2
100
1
0 0 20 40 60 VCEO (V) 80
0 0 50 100 150 Ts (oC) 200
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1998 Oct 06
3
Discrete Semiconductors
Product specification
NPN video transistor
BFQ235A
handbook, halfpage
50
MBB891
MBB890
handbook, halfpage
5.5
hFE
Ccb (pF) 4.5
40
3.5
30 2.5
20 0 100 200 IC (mA) 300
1.5 0 10 20 30 VCB (V) 40
VCE = 10 V; Tamb = 25 °C.
f = 1 MHz; Tamb = 25 °C.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Collector-base capacitance as a function of collector-base voltage; typical values.
handbook, halfpage
1.5
MBK898
fr (GHz) 1
0.5
0 0 50 100 IC (mA) 150
VCE = 10 V; f = 100 MHz; Tamb = 25 °C.
Fig.6
Transition frequency as a function of collector current; typical values.
1998 Oct 06
4
Discrete Semiconductors
Product specification
NPN video transistor
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink, 1 mounting hole; 3 leads (in-line)
E1 P c1
BFQ235A
SOT128B
P1
HE
D
L2
L1
L
1
2
bp e1 e E
3
w M Q A c
0 DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.4 bp 0.8 0.6 c 0.65 0.5 c1 0.56 0.46 D 8.6 8.4 E 10.1 9.9 E1 10.4 10.0 e 5.08
5 scale e1 2.54
10 mm
HE 24.2 23.8
L 13.3 12.2
L1 2.4 2.0
L2(1) max 2.5
P 3.8 3.6
P1 3.9 3.7
Q 1.7 1.5
w 0.25
Note 1. Plastic flash allowed within this zone OUTLINE VERSION SOT128B REFERENCES IEC JEDEC TO-202 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28
1998 Oct 06
5
Discrete Semiconductors
Product specification
NPN video transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BFQ235A
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause perman.