DatasheetsPDF.com

BFQ235 Dataheets PDF



Part Number BFQ235
Manufacturers NXP
Logo NXP
Description NPN video transistor
Datasheet BFQ235 DatasheetBFQ235 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D066 BFQ235A NPN video transistor Product specification Supersedes data of 1997 Oct 02 1998 Oct 06 Discrete Semiconductors Product specification NPN video transistor FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • CRT amplifier buffer/driver in high-resolution colour graphics monitors. DESCRIPTION NPN video transistor in a SOT128B .

  BFQ235   BFQ235


Document
DISCRETE SEMICONDUCTORS DATA SHEET M3D066 BFQ235A NPN video transistor Product specification Supersedes data of 1997 Oct 02 1998 Oct 06 Discrete Semiconductors Product specification NPN video transistor FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • CRT amplifier buffer/driver in high-resolution colour graphics monitors. DESCRIPTION NPN video transistor in a SOT128B (TO-202) plastic package. PNP complement: BFQ255A. PINNING PIN 1 2 3 DESCRIPTION emitter collector base 1 2 3 BFQ235A fpage MGA323 Fig.1 Simplified outline (SOT128B; TO-202). QUICK REFERENCE DATA SYMBOL VCBO VCER IC Ptot hFE fT Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCER VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. 1998 Oct 06 2 PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 100 °C; note 1; see Fig.3 open base RBE = 100 Ω open collector CONDITIONS open emitter − − − − − − −65 − MIN. 95 110 3 300 3 +150 175 MAX. 115 V V V V mA W °C °C UNIT PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Ts ≤ 100 °C; note 1 IC = 50 mA; VCE = 10 V; Tamb = 25 °C IC = 50 mA; VCE = 10 V; Tamb = 25 °C CONDITIONS open emitter RBE = 100 Ω − − − − 20 0.8 MIN. − − − − 35 1.2 TYP. MAX. 115 110 300 3 − − GHz UNIT V V mA W Discrete Semiconductors Product specification NPN video transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)CER V(BR)EBO ICES ICBO hFE fT Ccb PARAMETER collector-base breakdown voltage CONDITIONS IC = 0.1 mA; IE = 0 MIN. 115 95 110 3 − − PARAMETER CONDITIONS BFQ235A VALUE 25 UNIT K/W thermal resistance from junction to soldering point Ts ≤ 100 °C; note 1 TYP. MAX. UNIT − − − − − − 35 1.2 2 − − − − 100 20 − − − GHz pF V V V V µA µA collector-emitter breakdown voltage IC = 10 mA; IB = 0 collector-emitter breakdown voltage IC = 10 mA; RBE = 100 Ω emitter-base breakdown voltage collector cut-off current collector cut-off current DC current gain transition frequency collector-base capacitance IE = 0.1 mA; IC = 0 IB = 0; VCE = 50 V IE = 0; VCB = 50 V IC = 50 mA; VCE = 10 V; Tamb = 25 °C; 20 see Fig.4 IC = 50 mA; VCE = 10 V; f = 100 MHz; Tamb = 25 °C; see Fig.6 IC = 0; VCB = 10 V; f = 1 MHz; Tamb = 25 °C; see Fig.5 0.8 − handbook, halfpage 400 MBB887 handbook, halfpage 4 MBB888 IC (mA) 300 Ptot (W) 3 200 2 100 1 0 0 20 40 60 VCEO (V) 80 0 0 50 100 150 Ts (oC) 200 Fig.2 DC SOAR. Fig.3 Power derating curve. 1998 Oct 06 3 Discrete Semiconductors Product specification NPN video transistor BFQ235A handbook, halfpage 50 MBB891 MBB890 handbook, halfpage 5.5 hFE Ccb (pF) 4.5 40 3.5 30 2.5 20 0 100 200 IC (mA) 300 1.5 0 10 20 30 VCB (V) 40 VCE = 10 V; Tamb = 25 °C. f = 1 MHz; Tamb = 25 °C. Fig.4 DC current gain as a function of collector current; typical values. Fig.5 Collector-base capacitance as a function of collector-base voltage; typical values. handbook, halfpage 1.5 MBK898 fr (GHz) 1 0.5 0 0 50 100 IC (mA) 150 VCE = 10 V; f = 100 MHz; Tamb = 25 °C. Fig.6 Transition frequency as a function of collector current; typical values. 1998 Oct 06 4 Discrete Semiconductors Product specification NPN video transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink, 1 mounting hole; 3 leads (in-line) E1 P c1 BFQ235A SOT128B P1 HE D L2 L1 L 1 2 bp e1 e E 3 w M Q A c 0 DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.4 bp 0.8 0.6 c 0.65 0.5 c1 0.56 0.46 D 8.6 8.4 E 10.1 9.9 E1 10.4 10.0 e 5.08 5 scale e1 2.54 10 mm HE 24.2 23.8 L 13.3 12.2 L1 2.4 2.0 L2(1) max 2.5 P 3.8 3.6 P1 3.9 3.7 Q 1.7 1.5 w 0.25 Note 1. Plastic flash allowed within this zone OUTLINE VERSION SOT128B REFERENCES IEC JEDEC TO-202 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1998 Oct 06 5 Discrete Semiconductors Product specification NPN video transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BFQ235A This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause perman.


BFQ232A BFQ235 BFQ235A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)