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BFQ236 Dataheets PDF



Part Number BFQ236
Manufacturers NXP
Logo NXP
Description NPN video transistors
Datasheet BFQ236 DatasheetBFQ236 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BFQ236; BFQ236A NPN video transistors Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC05 1997 Oct 02 Philips Semiconductors Product specification NPN video transistors FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS • CRT amplifier buffer/driver in high-resolution colour gr.

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DISCRETE SEMICONDUCTORS DATA SHEET BFQ236; BFQ236A NPN video transistors Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC05 1997 Oct 02 Philips Semiconductors Product specification NPN video transistors FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS • CRT amplifier buffer/driver in high-resolution colour graphics monitors. DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter page BFQ236; BFQ236A 4 1 Top view 2 3 MSB002 - 1 Fig.1 Simplified outline (SOT223). QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BFQ236 BFQ236A VCER collector-emitter voltage BFQ236 BFQ236A IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency BFQ236 BFQ236A Note 1. Ts is the temperature at the soldering point of the collector lead. Ts ≤ 115 °C; note 1 IC = 50 mA; VCE = 10 V; see Fig.4 IC = 50 mA; VCE = 10 V; f = 100 MHz 1 0.8 1.4 1.2 − − GHz GHz RBE = 100 Ω − − − − 20 − − − − 35 95 110 300 2 − V V mA W open emitter − − − − 100 115 V V CONDITIONS MIN. TYP. MAX. UNIT 1997 Oct 02 2 Philips Semiconductors Product specification NPN video transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BFQ236 BFQ236A VCEO collector-emitter voltage BFQ236 BFQ236A VCER collector-emitter voltage BFQ236 BFQ236A VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector lead. THERMAL CHARACTERISTICS SYMBOL Rth j-s Notes 1. Ts is the temperature at the soldering point of the collector lead. PARAMETER thermal resistance from junction to soldering point emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 115 °C; note 1; see Fig.3 open collector RBE = 100 Ω open base CONDITIONS open emitter BFQ236; BFQ236A MIN. − − − − − − − − − −65 − MAX. 100 115 65 95 95 110 3 300 2 +150 175 V V V V V V V UNIT mA W °C °C CONDITIONS Ts = 115 °C; Ptot = 2 W; notes 1 and 2 VALUE 30 UNIT K/W 2. Device mounted on a printed-circuit board measuring 40 × 40 × 1 mm (collector pad 35 × 17 mm). 1997 Oct 02 3 Philips Semiconductors Product specification NPN video transistors CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO BFQ236 BFQ236A V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; IB = 0 BFQ236 BFQ236A V(BR)CER collector-emitter breakdown voltage IC = 1 mA; RBE = 100 Ω BFQ236 BFQ236A ICES ICBO hFE Cc Ccb fT collector-emitter cut-off current collector-base cut-off current DC current gain collector capacitance collector-base capacitance transition frequency BFQ236 BFQ236A IB = 0; VCE = 50 V IE = 0; VCB = 50 V IC = 50 mA; VCE = 10 V; see Fig.4 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VCB = 10 V; f = 1 MHz; see Fig.6 IC = 50 mA; VCE = 10 V; f = 100 MHz; see Fig.5 PARAMETER collector-base breakdown voltage CONDITIONS IC = 100 µA; IE = 0 BFQ236; BFQ236A MIN. 100 115 65 95 95 110 − − 20 − − TYP. − − − − − − − − 35 1.8 1.5 MAX. − − − − − − 100 20 − − − UNIT V V V V V V µA µA pF pF 1 0.8 1.4 1.2 − − GHz GHz MRA604 400 handbook, halfpage IC (mA) 300 handbook, halfpage 3 MRA600 Ptot (W) 2 200 1 100 BFQ236 0 0 40 80 VCER (V) RBE ≤ 100 Ω. BFQ236A 0 120 0 50 100 150 200 Ts (oC) Fig.2 DC SOAR. Fig.3 Power derating curve. 1997 Oct 02 4 Philips Semiconductors Product specification NPN video transistors BFQ236; BFQ236A MBB434 MBC969 handbook, halfpage 50 2.0 handbook, halfpage fT (GHz) hFE 40 1.5 BFQ236A 30 1.0 BFQ236 20 0 100 200 IC (mA) 300 0.5 0 50 100 IC (mA) 150 VCE = 10 V. VCE = 10 V; Tamb = 25 °C. Fig.4 DC current gain as a function of collector current; typical values. Fig.5 Transition frequency as a function of collector current; typical values. handbook, halfpage 5 MRA602 Ccb (pF) 4 3 2 1 0 0 5 10 15 20 25 30 35 VCB (V) IC = 0; f = 1 MHz. Fig.6 Collector-base capacitance as a function of collector-base voltage; typical values. 1997 Oct 02 5 Philips Semiconductors Product specification NPN video transistors PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads BFQ236; BFQ236A SOT223 D B E A X c y HE b1 v M A 4 Q A A1 1 e1 e 2 bp 3 w M B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 96-11-11 97-02-28 1997 Oct 02 6 Philips Semiconductors Product specification NPN video transistors DEFINITIONS Data sheet status Obje.


BFQ235A BFQ236 BFQ236A


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