Document
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ236; BFQ236A NPN video transistors
Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC05 1997 Oct 02
Philips Semiconductors
Product specification
NPN video transistors
FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS • CRT amplifier buffer/driver in high-resolution colour graphics monitors. DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter
page
BFQ236; BFQ236A
4
1
Top view
2
3
MSB002 - 1
Fig.1
Simplified outline (SOT223).
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BFQ236 BFQ236A VCER collector-emitter voltage BFQ236 BFQ236A IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency BFQ236 BFQ236A Note 1. Ts is the temperature at the soldering point of the collector lead. Ts ≤ 115 °C; note 1 IC = 50 mA; VCE = 10 V; see Fig.4 IC = 50 mA; VCE = 10 V; f = 100 MHz 1 0.8 1.4 1.2 − − GHz GHz RBE = 100 Ω − − − − 20 − − − − 35 95 110 300 2 − V V mA W open emitter − − − − 100 115 V V CONDITIONS MIN. TYP. MAX. UNIT
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Philips Semiconductors
Product specification
NPN video transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BFQ236 BFQ236A VCEO collector-emitter voltage BFQ236 BFQ236A VCER collector-emitter voltage BFQ236 BFQ236A VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector lead. THERMAL CHARACTERISTICS SYMBOL Rth j-s Notes 1. Ts is the temperature at the soldering point of the collector lead. PARAMETER thermal resistance from junction to soldering point emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 115 °C; note 1; see Fig.3 open collector RBE = 100 Ω open base CONDITIONS open emitter
BFQ236; BFQ236A
MIN. − − − − − − − − − −65 −
MAX. 100 115 65 95 95 110 3 300 2 +150 175 V V V V V V V
UNIT
mA W °C °C
CONDITIONS Ts = 115 °C; Ptot = 2 W; notes 1 and 2
VALUE 30
UNIT K/W
2. Device mounted on a printed-circuit board measuring 40 × 40 × 1 mm (collector pad 35 × 17 mm).
1997 Oct 02
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Philips Semiconductors
Product specification
NPN video transistors
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO BFQ236 BFQ236A V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; IB = 0 BFQ236 BFQ236A V(BR)CER collector-emitter breakdown voltage IC = 1 mA; RBE = 100 Ω BFQ236 BFQ236A ICES ICBO hFE Cc Ccb fT collector-emitter cut-off current collector-base cut-off current DC current gain collector capacitance collector-base capacitance transition frequency BFQ236 BFQ236A IB = 0; VCE = 50 V IE = 0; VCB = 50 V IC = 50 mA; VCE = 10 V; see Fig.4 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VCB = 10 V; f = 1 MHz; see Fig.6 IC = 50 mA; VCE = 10 V; f = 100 MHz; see Fig.5 PARAMETER collector-base breakdown voltage CONDITIONS IC = 100 µA; IE = 0
BFQ236; BFQ236A
MIN. 100 115 65 95 95 110 − − 20 − −
TYP. − − − − − − − − 35 1.8 1.5
MAX. − − − − − − 100 20 − − −
UNIT V V V V V V µA µA
pF pF
1 0.8
1.4 1.2
− −
GHz GHz
MRA604
400 handbook, halfpage IC (mA) 300
handbook, halfpage
3
MRA600
Ptot (W)
2
200
1 100 BFQ236 0 0 40 80 VCER (V) RBE ≤ 100 Ω. BFQ236A 0 120 0 50 100 150 200
Ts (oC)
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1997 Oct 02
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Philips Semiconductors
Product specification
NPN video transistors
BFQ236; BFQ236A
MBB434
MBC969
handbook, halfpage
50
2.0 handbook, halfpage fT (GHz)
hFE
40
1.5
BFQ236A 30 1.0
BFQ236
20 0 100 200 IC (mA) 300
0.5 0 50 100 IC (mA) 150
VCE = 10 V.
VCE = 10 V; Tamb = 25 °C.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Transition frequency as a function of collector current; typical values.
handbook, halfpage
5
MRA602
Ccb (pF)
4
3
2
1
0
0
5
10
15
20
25
30 35 VCB (V)
IC = 0; f = 1 MHz.
Fig.6
Collector-base capacitance as a function of collector-base voltage; typical values.
1997 Oct 02
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Philips Semiconductors
Product specification
NPN video transistors
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BFQ236; BFQ236A
SOT223
D
B
E
A
X
c y HE b1 v M A
4
Q A A1
1
e1 e
2
bp
3
w M B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 96-11-11 97-02-28
1997 Oct 02
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Philips Semiconductors
Product specification
NPN video transistors
DEFINITIONS Data sheet status Obje.