Document
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ252; BFQ252A PNP video transistors
Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05 1997 Oct 02
Philips Semiconductors
Product specification
PNP video transistors
FEATURES • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-resolution colour graphics monitors. PIN 1 2 3 DESCRIPTION emitter collector base DESCRIPTION PNP video transistor in a SOT32 (TO-126) plastic package. NPN complements: BFQ232 and BFQ232A. PINNING
page
BFQ252; BFQ252A
Top view
1
2
3
MBC077 - 1
Fig.1
Simplified outline (SOT32; TO-126).
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BFQ252 BFQ252A VCER collector-emitter voltage BFQ252 BFQ252A IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency BFQ252 BFQ252A Note 1. Ts is the temperature at the soldering point of the collector pin. Ts ≤ 115 °C; note 1 IC = −50 mA; VCE = −10 V; Tamb = 25 °C IC = −50 mA; VCE = −10 V; f = 100 MHz; Tamb = 25 °C RBE = 100 Ω − − − − 20 1 0.8 − − − − 30 1.3 1.2 −95 −110 −300 3 − − − GHz GHz V V mA W open emitter − − − − −100 −115 V V CONDITIONS MIN. TYP. MAX. UNIT
1997 Oct 02
2
Philips Semiconductors
Product specification
PNP video transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BFQ252 BFQ252A VCEO collector-emitter voltage BFQ252 BFQ252A VCER collector-emitter voltage BFQ252 BFQ2552A VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 115 °C; note 1; see Fig.3 open collector RBE = 100 Ω open base CONDITIONS open emitter
BFQ252; BFQ252A
MIN. − − − − − − − − − −65 −
MAX. −100 −115 −65 −95 −95 −110 −3 −300 3 +150 175 V V V V V V V
UNIT
mA W °C °C
CONDITIONS
VALUE 20
UNIT K/W
thermal resistance from junction to soldering point Ts ≤ 115 °C; note 1
1997 Oct 02
3
Philips Semiconductors
Product specification
PNP video transistors
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO BFQ252 BFQ252A V(BR)CEO collector-emitter breakdown voltage IC = −10 mA; IB = 0 BFQ252 BFQ252A V(BR)CER collector-emitter breakdown voltage IC = −10 mA; RBE = 100 Ω BFQ252 BFQ252A V(BR)EBO ICES ICBO hFE Ccb fT emitter-base breakdown voltage collector-emitter cut-off current collector-base cut-off current DC current gain collector-base capacitance transition frequency BFQ252 BFQ252A IE = −0.1 mA; IC = 0 IB = 0; VCE = −50 V IE = 0; VCB = −50 V IC = −50 mA; VCE = −10 V; Tamb = 25 °C; see Fig.4 IC = ic = 0; VCB = −10 V; f = 1 MHz; Tamb = 25 °C; see Fig.5 PARAMETER collector-base.