BFQ270

DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES High power gain Emitter-ballasting resistors for good thermal stability Gold metallization ensures excellent reliability. DESCRIPTION Silicon NPN transistor mounted in a 4-lead dual-emitter SOT172A1. envelope with a ceramic cap. All leads are isolated from the mounting base. It is primarily intended for use in MATV and CATV amplifiers. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM VO PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain output voltage up to Tc = 100 °C IC = 240 mA; VCE = 18 V; Tj = 25 °C IC = 240 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 °C IC = 240 mA; VCE = 18 V; f = 800 MHz; Tamb = 25 °C dim = −60 dB; IC = 240 mA; VCE = 18 V; RL = 75 Ω; f(p+q-r) = 793.25 MHz WARNING Product and environmental safety - toxic materials open base CONDITIONS open emitter PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 1 page BFQ270 4 3 2 Top view MBC869 Fig.1 SOT172A1. MIN. TYP. MAX. UNIT − − − − 60 − − − − − − − − 6 10 1.6 25 19 500 10 − − − − GHz dB V V V mA W This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, ...