K3457

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3457 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3457 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3457 Isolated TO-220 FEATURES Low gate charge QG = 24 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A) Gate voltage rating ±30 V Low on-state resistance RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 3.0 A) Avalanche capability ratings Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TA = 25°C) PT1 Total Power Dissipation (TC = 25°C) PT2 Channel Temperature Tch Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 T...