Power Transistors
2SC4152
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s F...
Power
Transistors
2SC4152
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCER VCEO VEBO ICP IC
PC
1400 1400 700
5 1.0 0.3 20 2
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V V A A
W
˚C ˚C
14.0±0.5 Solder Dip 4.0
16.7±0.3 7.5±0.2
0.7±0.1
10.0±0.2 5.5±0.2
Unit: mm
4.2±0.2 2.7±0.2
4.2±0.2
φ3.1±0.1
1.3±0.2 1.4±0.1
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25
5.08±0.5 123
1:Base 2:Collector 3:Emitter TO–220 Ful...
