NPN Silicon RF Transistor
For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collect...
NPN Silicon RF
Transistor
For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. q Hermetically sealed ceramic package q HiRel/Mil screening available.
q
BFQ 70
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 70 Marking 70 Ordering Code (tape and reel) Q62702-F774 Pin Configuration 1 2 3 4 B E C E Package1) Cerex-X
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS ≤ 121 ˚C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point 3) Rth JA Rth JS
≤ ≤
Symbol VCE0 VCES VCB0 VEB0 IC IB Ptot Tj TA Tstg
Values 15 20 20 2.5 35 4 300 175 – 65 … + 175 – 65 … + 175
Unit V
mA mW ˚C
260 180
K/W
1) 2) 3)
For detailed dimensions see chapter Package Outlines. Package mounted on alumina 16 mm × 25 mm × 0.7 mm. TS is measured on the collector lead at the soldering point to the pcb.
BFQ 70
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 3 mA, VCE = 6 V IC = 10 mA, VCE = 6 V Collector-emitter saturation voltage IC = 20 mA, ...