NPN Silicon RF Transistor
q
BFQ 71
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector c...
NPN Silicon RF
Transistor
q
BFQ 71
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. Hermetically sealed ceramic package. HiRel/Mil screening available. CECC-type available: CECC 50002/260.
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ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 71 Marking 71 Ordering Code (tape and reel) Q62702-F775 Pin Configuration 1 2 3 4 B E C E Package1) Cerec-X
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS ≤ 103 ˚C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point3) Rth JA Rth JS
≤ ≤
Symbol VCE0 VCES VCB0 VEB0 IC IB Ptot Tj TA Tstg
Values 15 20 20 2.5 30 4 300 175 – 65 … + 175 – 65 … + 175
Unit V
mA mW ˚C
320 240
K/W
For detailed dimensions see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.
1) 2)
BFQ 71
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 5 mA, VCE = 6 V IC = 20 mA, VCE = 6 V Collector-emitter satu...
