PNP Silicon RF Transistor
q q
BFQ 76
For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. Complemen...
PNP Silicon RF
Transistor
q q
BFQ 76
For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. Complementary type: BFQ 71 (
NPN).
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 76 Marking 76 Ordering Code (tape and reel) Q62702-F804 Pin Configuration 1 2 3 4 B E C E Package1) Cerec-X
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS ≤ 116 ˚C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point 3) Rth JA Rth JS
≤ ≤
Symbol VCE0 VCB0 VEB0 IC Ptot Tj TA Tstg
Values 15 20 2 30 250 175 – 65 … + 175 – 65 … + 175
Unit V
mA mW ˚C
315 235
K/W
For detailed dimensions see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.
1) 2)
BFQ 76
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 14 mA, VCE = 10 V AC Characteristics Transition frequency IC = 14 mA, VCE = 10 V, f = 500 MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Input capacitance VEB = 0.5 V, IC = ic = 0, f = 1 MHz Output capacitance VCE = ...