NPN Silicon RF Transistor
q q q q
BFQ 82
For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband application...
NPN Silicon RF
Transistor
q q q q
BFQ 82
For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA. Hermetically sealed ceramic package. fT = 8 GHz F = 1.1 dB at 800 MHz
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 82 Marking 82 Ordering Code (tape and reel) Q62702-F1189 Pin Configuration 1 2 3 4 B E C E Package1) Cerec-X
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Peak collector current, f ≥ 10 MHz Base current Peak base current, f ≥ 10 MHz Total power dissipation, TS ≤ 95 ˚C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Junction - case 3)
1) 2)
Symbol VCE0 VCES VCB0 VEB0 IC ICM IB IBM Ptot Tj TA Tstg
Values 12 20 20 2 80 80 10 10 500 175 – 65 … + 175 – 65 … + 175
Unit V
mA
mW ˚C
Rth JA Rth JS
≤ ≤
240 160
K/W
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.
BFQ 82
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 10 V, IE = 0, TA = 125 ˚C Emi...
