DISCRETE SEMICONDUCTORS
DATA SHEET
BFR106 NPN 5 GHz wideband transistor
Product specification
September 1995
NXP Sem...
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR106
NPN 5 GHz wideband
transistor
Product specification
September 1995
NXP Semiconductors
NPN 5 GHz wideband
transistor
Product specification
BFR106
DESCRIPTION
NPN silicon planar epitaxial
transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications.
PINNING
PIN DESCRIPTION Code: R7p
1 base 2 emitter 3 collector
lfpage
3
1 Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO VCEO IC Ptot hFE fT
collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency
GUM
maximum unilateral power gain
Vo output voltage
CONDITIONS
open emitter open base
up to Ts = 70 C; note 1 IC = 50 mA; VCE = 9 V; Tamb = 25 C IC = 50 mA; VCE = 9 V; f = 500 MHz; Tamb = 25 C IC = 30 mA; VCE = 6 V; f = 800 MHz; Tamb = 25 C IC = 50 mA; VCE = 9 V; RL = 75 ; Tamb = 25 C; dim = 60 dB; f(pqr) = 793.25 MHz
MIN. 25
TYP. 80 5
11.5
350
MAX. 20 15 100 500
UNIT V V mA mW
GHz
dB
mV
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO VCEO VEBO IC Ptot Tstg Tj
collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature
open emitter open base open collector
up to Ts = 70 C; note 1
Note 1. Ts is the temperature at the soldering point ...