BFR 180W
NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector curre...
BFR 180W
NPN Silicon RF
Transistor For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA fT = 7GHz F = 2.1dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 180W RDs Q62702-F1490 1=B 2=E 3=C
Package SOT-323
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 8 10 10 2 4 0.5 mW 30 150 - 65 ... + 150 - 65 ... + 150 ≤ 790 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 126 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-11-1996
BFR 180W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
8 100 -
V µA 100 nA 100 µA 1 30 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 10 V, VBE = 0
Collector-base cutoff current
VCB = 8 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 1 mA, VCE = 5 V
Semiconductor Group
2
Dec-11-1996
BFR 180W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol mi...