BFR180W
NPN Silicon RF Transistor
For low-power amplifiers in mobile
3
communication systems (pager) at collector cu...
BFR180W
NPN Silicon RF
Transistor
For low-power amplifiers in mobile
3
communication systems (pager) at collector currents from 0.2 mA to 2.5 mA
fT = 7 GHz
F = 2.1 dB at 900 MHz
2 1
VSO05561
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR180W
Maximum Ratings Parameter
Marking RDs 1=B
Pin Configuration 2=E
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SOT323
Value 8 10 10 2 4 0.5 30 150 -65 ... 150 -65 ... 150 mW °C mA Unit V
3=C
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS 126 °C 1) Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point2) RthJS
790
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
1
Jun-13-2001
BFR180W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE = 5 V hFE 30 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 8 V Symbol min. Values typ. max. Unit
2
Jun-13-2001
BFR180W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Pa...
