PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation...
PNP Silicon AF
Transistors For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54 ... BCP56 (
NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
BCP51...-BCP53...
Type BCP51 BCP51-16 BCP52-16 BCP53-10 BCP53-16
Marking
Pin Configuration
*
1=B 2=C 3=E 4=C -
-
*
1=B 2=C 3=E 4=C -
-
*
1=B 2=C 3=E 4=C -
-
*
1=B 2=C 3=E 4=C -
-
*
1=B 2=C 3=E 4=C -
-
* Marking is the same as type-name
Package SOT223 SOT223 SOT223 SOT223 SOT223
1
2011-10-13
BCP51...-BCP53...
Maximum Ratings Parameter Collector-emitter voltage BCP51 BCP52 BCP53
Symbol VCEO
Value
45 60 80
Collector-base voltage BCP51 BCP52 BCP53
VCBO 45 60 100
Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 120°C
VEBO
5
IC
1
ICM
1.5
IB
100
IBM
200
Ptot
2
Junction temperature
Tj
150
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
≤ 15
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit V
A mA W °C Unit K/W
2
2011-10-13
BCP51...-BCP53...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCP51 IC = 10 mA, IB = 0 , BCP52 IC = 10 mA, IB = 0 , BCP5...