REPLACEMENT TYPE : 2SD1005
FEATURES Small Flat Package High Breakdown Voltage Excellent DC Current Gain Linearity
...
REPLACEMENT TYPE : 2SD1005
FEATURES Small Flat Package High Breakdown Voltage Excellent DC Current Gain Linearity
HED1005(
NPN)
GENERAL PURPOSE
TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
VCBO
100
Collector-Emitter Voltage
VCEO
80
Emitter-Base Voltage
VEBO
5
Collector Current-Continuous
IC
1
Collector Power Dissipation
PC 500
Thermal Resistance From Junction to Ambient RθJA
250
Junction Temperature
TJ 150
Storage Temperature
Tstg -55~+150
Unit V V V A
mW °C/W
°C °C
SOT-89 1:BASE 2:COLLECTOR 3:EMITTER
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-o ff Current Emitter Cut- off Current
DC Current Gain(note)
Collector-Emitter Saturation Voltage
VCBO VCEO VEBO ICBO IEBO hFE hFE VCE(sat)
IC=0.1mA,IE=0 IC=1mA,IB=0 IE=0.1mA,...
