Document
Production specification
NPN Epitaxial Planar Silicon Transistors
2SD1802
FEATURES
Adoption of FBET,MBIT processes.
Pb
Large current capacity and wide ASO. Lead-free
Low collector-to-emitter saturation voltage.
Fast switching speed.
Small and slim package making it easy to
Make 2SB1802-used sets smaller.
APPLICATIONS
High-Current Switching Applications.
Voltage regulators,relay drivers,lamp drivers,
Electrical equipment.
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
60 V
VCEO
Collector-Emitter Voltage
50 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current
3A
ICP Collector Power Dissipation
6A
PC Collector Power Dissipation
1W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
V/(W)018 Rev.A
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Production specification
NPN Epitaxial Planar Silicon Transistors
2SD1802
ELECTRICAL CHARACTER.