Document
Production specification
NPN Epitaxial Planar Silicon Transistors
FEATURES
Adoption of FBET,MBIT processes.
Pb
Large current capacity and wide ASO. Lead-free
Low collector-to-emitter saturation voltage.
Excllent linearity of hFE.
High fT.
Fast switching time.
2SD1815
APPLICATIONS
Relay drivers,high-speed inverters, Converters,and other high-current Switching applications.
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
120 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current
3A
ICP Collector Power Dissipation
6A
PC Collector Power Dissipation
1W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
W019 Rev.A
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Production specification
NPN Epitaxial Planar Silicon Transistors
2SD1815
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter.