2SD2118

Low VCE(sat) Transistor (strobe flash) FEATURES  Low VCE(sat) VCE(sat)=0.25V(Typ). (IC/IB-4A/0.1A) Pb Lead-free  Excellent DC current gain characteristics.  Complements the 2SB1412. Production specification 2SD2118 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter Voltage 50 V 20 V VEBO Emitter-Base Voltage 6V IC Collector Current 5A ICP Collector Power Dissipation 10 A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ W022 Rev.A www.gmesemi.com 1 Production specification Low VCE(sat) Transistor (strobe flash) 2SD2118 ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage VCBO IC=50uA,IE=0 50 MAX UNIT Collector-emitter breakdown voltage VCEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage...