Production specification
High Voltage Fast Switching NPN Power Transistor 3DD13003
FEATURES
PC=1W(Mounted on ceramic...
Production specification
High Voltage Fast Switching
NPN Power
Transistor 3DD13003
FEATURES
PC=1W(Mounted on ceramic substrate). High speed switching. Die size:1.34*1.34 Small flat package.
Pb
Lead-free
APPLICATIONS
Mainly used for compact electronic energy saving lamps, electronic ballast and mobile phone chargers power switch circuit
ORDERING INFORMATION
Type No.
Marking
3DD13003
13003
SOT-89S
Package Code SOT-89S
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
600
VCEO
Collector-Emitter Voltage
400
VEBO
Emitter-Base Voltage
9
IC Collector Current -Continuous
1.3
PC Collector Dissipation
0.5
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V A W ℃
Z001 Rev.A
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Production specification
High Voltage Fast Switching
NPN Power
Transistor 3DD13003
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
M...