PNP Silicon Epitaxial Planar Transistor
FEATURES
Low speed switching. Low saturation voltage. Excellent hFE linea...
PNP Silicon Epitaxial Planar
Transistor
FEATURES
Low speed switching. Low saturation voltage. Excellent hFE linearity and high hFE. Complementary: D882.
Pb
Lead-free
Production specification
B772
APPLICATIONS
Audio frequency power amplifier.
TO-251
TO-252
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-40
VCEO
Collector-Emitter Voltage
-30
VEBO
Emitter-Base Voltage
-5
IC Collector Current -Continuous
-3
PC Collector Dissipation
1.25
RθJA Thermal Resistance Junction to Ambient Air 100
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V A W ℃/W ℃
V/(W)023 Rev.A
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Production specification
PNP Silicon Epitaxial Planar
Transistor
B772
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-40
V
Collector-emitter breakdown vol...
