B772 Transistor Datasheet

B772 Datasheet, PDF, Equivalent


Part Number

B772

Description

PNP Silicon Epitaxial Planar Transistor

Manufacture

GME

Total Page 5 Pages
Datasheet
Download B772 Datasheet


B772
PNP Silicon Epitaxial Planar Transistor
FEATURES
Low speed switching.
Low saturation voltage.
Excellent hFE linearity and high hFE.
Complementary: D882.
Pb
Lead-free
Production specification
B772
APPLICATIONS
Audio frequency power amplifier.
TO-251
TO-252
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-40
VCEO
Collector-Emitter Voltage
-30
VEBO
Emitter-Base Voltage
-5
IC Collector Current -Continuous
-3
PC Collector Dissipation
1.25
RθJA Thermal Resistance Junction to Ambient Air 100
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
A
W
/W
V/(W)023
Rev.A
www.gmesemi.com
1

B772
Production specification
PNP Silicon Epitaxial Planar Transistor
B772
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-40
V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
-6
V
Collector cut-off current
ICBO VCB=-40V,IB=0
Collector cut-off current
ICEO VCB=-30V,IE=0
Emitter cut-off current
IEBO VEB=-6V,IC=0
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
VCE=-2V,IC=-1A
VCE=-2V,IC=-20mA
IC=-2A, IB= -0.2A
60
30
Base-emitter saturation voltage
VBE(sat)
IC=-2A, IB= -0.2A
Transition frequency
fT VCE=-5V, IC= -0.1A
Collector output capacitance
Cob VCB=-10V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
R
O
Range
60-120
100-200
Y
160-320
-1 μA
-1 μA
-1 μA
160 400
220
-0.3 -0.5 V
-1.0 -2.0 V
80 MHz
55 pF
G
200-400
V/(W)023
Rev.A
www.gmesemi.com
2


Features PNP Silicon Epitaxial Planar Transistor FEATURES  Low speed switching.  Low saturation voltage.  Excellent h FE linearity and high hFE.  Compleme ntary: D882. Pb Lead-free Production specification B772 APPLICATIONS  Au dio frequency power amplifier. TO-251 TO-252 MAXIMUM RATING @ Ta=25℃ unle ss otherwise specified Symbol Paramet er Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -30 VEBO Emitter-Base Voltage -5 I C Collector Current -Continuous -3 PC Collector Dissipation 1.25 RθJA The rmal Resistance Junction to Ambient Air 100 Tj,Tstg Junction and Storage Tem perature -55 to +150 Units V V V A W ℃/W ℃ V/(W)023 Rev.A www.gmesemi. com 1 Production specification PNP Si licon Epitaxial Planar Transistor B772 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UN IT Collector-base breakdown voltage V( BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown vol.
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