BC807-16L

General Purpose Transistors PNP Silicon BC807-16L, BC807-25L, BC807-40L Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC −45 −50 −6.0 −500 V V V mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, PD (Note 1) TA = 25°C Derate above 25°C 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 436 °C/W Total Device Dissipation Alumina Substrate, (Note 1) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 Board, 1 oz. Cu, 100mm2. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. DATA SHEET www.onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM 5xx M G G 1 5xx = Device Code xx = A1, B1, or C M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code or...