KTC4377

Production specification NPN Silicon Epitaxial Planar Transistor FEATURES Pb  High DC Current Gain and Excellent hFE Linearity Lead-free : hFE(1)=140 600(VCE=1V, IC=0.5A) : hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A).  Low saturation voltage:VCE(sat)=0.5V(Max). (IC=2A, IB=50mA).  Small flat package. KTC4377 APPLICATIONS  Power amplifier application.  Power switching application. ORDERING INFORMATION Type No. Marking KTC4377 SA/SB/SC/SD SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 10 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 2 IB Base Current 0.4 PC Collector Dissipation 500 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A A mW ℃ E124 Rev.A www.gmesemi.com 1 Production specification NPN Silicon Epitaxial Planar Transistor KTC4377 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unles...