MJD112

Epitaxial Planar NPN Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Applications.  Straight Lead.  MSL 3. Production specification MJD112 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current 2A ICP Collector Power Dissipation 4A IB Base Current 50 mA PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)025 Rev.A www.gmesemi.com 1 Production specification Epitaxial Planar NPN Transistor MJD112 ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-emitter sustaining voltage VCEO(sus) IC=30mA,IB=0 100 V Collector cut-off current ICEO VCE=50V,IB=0 20 ...