Epitaxial Planar NPN Transistor
FEATURES
High DC Current Gain. Built-in a Damper Diode at E-C.
Pb
Lead-free
Le...
Epitaxial Planar
NPN Transistor
FEATURES
High DC Current Gain. Built-in a Damper Diode at E-C.
Pb
Lead-free
Lead Formed for Surface Mount Applications.
Straight Lead.
Complement to MJD127.
Production specification
MJD122
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO VCEO VEBO IC ICP IB PC Tj ,Tstg
Collector-Base Volage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Base Current Collector Power Dissipation Junction and Storage temperature range
100 100 5 8 16 120 1.5 -65 to +150
V V V A A mA W ℃
V/(W)029 Rev.A
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Production specification
Epitaxial Planar
NPN Transistor
MJD122
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
MAX
UNIT
Collector-emitter sustaining voltage
VCEO(sus) IC=30mA,IB=0
100
V
Collector cut-off current
ICEO
VCE=50V,...