MJD117

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS MJD117 TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers. Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Collector-Base Voltage VCBO -100 Collector-Emitter Voltage VCEO -100 Emitter-Base Voltage VEBO -5 Collector Current Total Power Dissipation(TC=25oC) IC PD -2 25 Junction Temperature TJ +150 Storage Temperature TSTG -55 to +150 Unit V V V A W oC oC TO-252(DPAK) .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 .063(1.60) .055(1.40) .077(1.95) .065(1.65) .022(0.55) .018(0.45) 1 .035 (0.90) Max .032 Max (0.80) .228(5.80) .213(5.40) 23 .110(2.80) .087(2.20) .091 (2.30) Typ .059(1.50) .035(0.90) .024(0.60) .018(0.45) Dimensions in inches and (millimeters) Electrical Characteristics ...