Epitaxial Planar NPN Transistor
FEATURES
Low formed for surface mount application.
Pb
Lead-free
Electrically sim...
Epitaxial Planar
NPN Transistor
FEATURES
Low formed for surface mount application.
Pb
Lead-free
Electrically similar to popular and TIP41C.
Straight Lead.
APPLICATIONS
General purpose amplifier.
Low speed switching applications.
Production specification
MJD41C
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
100 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous
6A
ICP Collector Current -Peak
10 A
IB Base Current
2A
PC Collector Power Dissipation
1.25 W
Tj ,Tstg
Junction and Storage temperature range
-65 to +150
℃
V/(W)035 Rev.A
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Production specification
Epitaxial Planar
NPN Transistor
MJD41C
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
UNIT
Collector-emitter sustaining voltage
VCEO(sus) IC=30mA...
