PXT8050

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS PXT8050 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. Pinning 1 = Base 2 = Collector 3 = Emitter .066(1.70) .059(1.50) SOT-89 .063(1.60) .055(1.40) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 40 25 5 1500 300 +150 -55 to +150 Unit V V V mA mW oC oC .167(4.25) .159(4.05) .102(2.60) .095(2.40) 123 .020(0.51) .014(0.36) .060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40) .016(0.41) .014(0.35) Dimensions in inches and (millimeters) E(Rlaeticntgrsicaat 2l5CoChaamrabicentet treimstpiecrsature unless otherwise specified) Characteristic Symbol Min Typ Collector-Base Breakdown Volatge BVCBO 40 - Collector-Emitter Breakdown Voltage ...