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DTC114TE

GME

Digital Transistor

Production specification Digital Transistor FEATURES Pb  Epitaxial planar die construction. Lead-free  Complemen...


GME

DTC114TE

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Description
Production specification Digital Transistor FEATURES Pb  Epitaxial planar die construction. Lead-free  Complementary PNP types available(DTC).  Built-in biasing resistors,R1only.  Also available in lead free version.  MSL 1 APPLICATIONS  The NPN style digital transistor. ORDERING INFORMATION Type No. Marking DTC114TE DTC143TE DTC144TE 04 03 06 DTCXXXTE SOT-523 Package Code SOT-523 SOT-523 SOT-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC(Max.) Collector Current PD Power Dissipation RθJA Thermal Resistance, Junction to Ambient Air Tj,Tstg Operating and Storage and Temperature Range Value 50 50 5 100 150 625 -55 to +150 Units V V V mA mW ℃/W ℃ H038 Rev.A www.gmesemi.com 1 Production specification Digital Transistor DTCXXXTE ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test co...




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