BL10N30F

Production specification N-Channel Power MOSFET BL10N30F FEATURES  High switching speed.  RDS(ON)=0.65Ω @ VGS=10V.  100% avalanche tested.  Very Good Manufacturing Reliabilty. Pb Lead-free APPLICATIONS  N-Channel Power MOSFET.  Switching Applications. ITO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value VDS Drain-Source Voltage 300 Unit V VGS ID IDM PD EAS EAR PD RθJA RθJC Tj Tstg Gate -Source Voltage Drain Current Continuous at TC=25℃ Drain Current(pulsed)Note1 Power Dissipation at TC=25℃ Avalanche Energy(Single Pulsed (Note 2)) Avalanche Energy (Repetitive(Note 3)) Power Dissipation TC=25℃ Derate above 25°C Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Junction and StorageTemperature Range ±30 V 10 A 40 A 115 W 360 mJ 13.5 mJ 135 W 1.07 W/℃ 62.5 ℃/W 0.93 ℃/W -55 to +150 ℃ S058 Rev.A www.gmesemi.com 1 Production specification N-Channel Power MOSFET ...