BL10N60F

Silicon N-Channel Power MOSFET FEATURES  Fast Switching Pb  ESD Improved Capability Lead-free  ow Gate Charge (Typical Data:38nC)  Low Reverse transfer capacitances(Typical:15pF)  100% Single Pulse avalanche energy Test APPLICATIONS  Power switch circuit of adaptor and charger. Production specification BL10N60F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-to-Source voltage VGS ID IDMa1 dv/dta3 Gate -Source voltage Continuous Drain current Continuous Drain current Tc=100°C Pulsed Drain current Peak Diode Recovery dv/dt PD Power Dissipation Value 600 ±30 10 6.4 40 5.0 50 VESD(G-S) Gate source ESD(HBM-C=100pF,R=1.5kΩ) 4000 TJ,Tstg TL Operating Junction and StorageTemperature Maximum Temperature for Soldering 150，-55 to +150 300 Units V V A A V/ns W V ℃ ℃ S098 Rev.A www.gmesemi.com 1 Production specification Silicon N-Channel Power MOSFET BL10N60F ELECTRICAL CHARACTERISTICS @ Ta=25℃ un...