N-Channel Power Mosfet
N-Channel Power MOSFET
FEATURES
RDS(ON)=1.6Ω @ VGS=10V, ID=3A Low gate charge (Typically 51nC) Low CRSS (Typically...
Description
N-Channel Power MOSFET
FEATURES
RDS(ON)=1.6Ω @ VGS=10V, ID=3A Low gate charge (Typically 51nC) Low CRSS (Typically 45pF) High switching speed.
Production specification
BL6N70F
ITO-220AB
MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
Symbol Parameter
Value
VDS Drain-Source Voltage
700
Unit V
VGS ID IDM
PD
EAS EAR RθJA RθJC Tj Tstg
Gate -Source Voltage Drain Current Continuous at
Drain Current(pulsed)Note1
±30 TC=25℃ 6 TC=100°C 4
24
V A A
Power Dissipation Linear Derarting Factor Avalanche Energy(Single Pulsed (Note 3))
100 W 1.04 W/℃ 100 mJ
Avalanche Energy (Repetitive(Note 2))
13 mJ
Thermal Resistance,Junction-to-Ambient
62.5 ℃/W
Thermal Resistance,Junction-to-Case
0.96 ℃/W
Junction and StorageTemperature Range
-55 to +150 ℃
S058 Rev.A
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Production specification
N-Channel Power MOSFET
BL6N70F
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolut...
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