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BL8N40F Dataheets PDF



Part Number BL8N40F
Manufacturers GME
Logo GME
Description N-Channel Power Mosfet
Datasheet BL8N40F DatasheetBL8N40F Datasheet (PDF)

Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.2Ω@VGS = 10V. Pb  Ultra Low gate charge (typical 28nC) Lead-free  Low reverse transfer capacitance (CRSS = typical 12.0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness BL8N40F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDS Drain-Source voltage VGS Gate -Source voltage 400 ±30 ID Con.

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