Production specification
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
RDS(ON) =1.4Ω@VGS = 10V.
Pb
...
Production specification
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
RDS(ON) =1.4Ω@VGS = 10V.
Pb
Ultra Low gate charge (typical 28nC)
Lead-free
Low reverse transfer capacitance (CRSS = typical 12.0 pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
BL8N65F
ITO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VDS Drain-Source voltage VGS Gate -Source voltage
650 ±30
V V
ID
Continuous Drain current TC=25℃ TC=100℃
8 5.5
A
EAS
Single Pulse Avalanche Energy(Note2)
600
mJ
EAR
Avalanche Energy,Repetitive(Note1)
14.7
mJ
IAR Avalanche Current(Note2)
8A
ISD Continuous Drain-Source Current
8
A
ISM Pulsed Drain-Source Current
32 A
dv/dt
Peak Diode Recovery dv/dt(Note4)
4.5
V/ns
PD RθJC
Power Dissipation Junction-to-Case
110 W 2.6 ℃/W
RθJA
Junction-to-Ambient
62.5 ℃/W
TJ, Tstg
Junction ...
