2N7002

Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002 FEATURES  High Density Cell Design For Low Pb RDS(ON). Lead-free  Voltage Controlled Small Signal Switch.  Rugged and Reliable.  High Saturation Current Capability.  MSL 1 APPLICATIONS  N-channel enhancement mode effect transistor.  Switching application. SOT-23 ORDERING INFORMATION Type No. Marking 2N7002 7002 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS VDGR VGSS ID PD RθJA Drain-Source voltage 60 Drain-Gate voltage(RGS≤1MΩ) 60 Gate -Source voltage - continuous ±20 -Non Repetitive (tp<50μs) ±40 Maximum Drain current -continuous 115 -Pulsed 800 Power Dissipation 200 Thermal resistance,Junction-to-Ambient 625 TJ, Tstg Junction and Storage Temperature -50 to +150 Units V V V mA mW ℃/W ℃ C008 Rev.A www.gmesemi.com 1 Production specification N-Channel Enhancement Mode Field Eff...