BL2306

Production specification N-Channel Enhancement Mode Power Mosfet FEATURES  Capable of 2.5V gate drive  Lower on-resistance  Reliable and Rugged  Electrostatic Sensitive Devices.  MSL 1. APPLICATIONS  Power Management in Notebook.  Portable Equipment.  Battery Powered System. Pb Lead-free BL2306 SOT-23 ORDERING INFORMATION Type No. Marking BL2306 2306 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 20 VGSS ID IDM Gate -Source voltage Maximum Drain current TA=25℃ TA=70℃ Pulsed Drain current ±12 5.3 4.3 10 PD Power Dissipation 1.38 RθJA TJ, Tstg Thermal resistance,Junction-to-Ambient Operating Junction and Storage Temperature Range 90 -55~+150 Units V V A A W ℃/W ℃ C278 Rev.A www.gmesemi.com 1 Production specification N-Channel Enhancement Mode Power Mosfet BL2306 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Drain-Source...