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BL3400 Dataheets PDF



Part Number BL3400
Manufacturers GME
Logo GME
Description N-Channel Power Mosfet
Datasheet BL3400 DatasheetBL3400 Datasheet (PDF)

Production specification N-Channel Enhancement Mode Field Effect Transistor BL3400 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = 30V  ID = 5.7A(VGS = 10V)  RDS(ON) < 26.5mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) Pb Lead-free APPLICATIONS  N-channel enhancement mode effect transistor.  Switching application. ORDERING INFORMATION Type No. Marking BL3400 3400 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol .

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Production specification N-Channel Enhancement Mode Field Effect Transistor BL3400 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = 30V  ID = 5.7A(VGS = 10V)  RDS(ON) < 26.5mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) Pb Lead-free APPLICATIONS  N-channel enhancement mode effect transistor.  Switching application. ORDERING INFORMATION Type No. Marking BL3400 3400 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 30 VGSS ID IDM PD RθJA Gate -Source voltage Continuous Drain CurrentA Pulsed Drain Current a ±12 @ TA = 25 ℃ 5.7 @ TA = 70 ℃ 4.7 25 Power Dissipation 1.4 Thermal resistance,Junction-to-Ambient 70 TJ, Tstg Junction and Storage Temperature -55 to +150 Units V V A A W ℃/W ℃ C273 Rev.A www.gmesemi.com 1 Production specification N-Channel Enhancement Mode Field Effect Transistor BL3400 ELECTRICAL CHARACTER.


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