Document
Production specification
N-Channel Enhancement Mode Field Effect Transistor BL3400
FEATURES
Electrostatic Sensitive Devices. VDS (V) = 30V ID = 5.7A(VGS = 10V) RDS(ON) < 26.5mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V)
Pb
Lead-free
APPLICATIONS
N-channel enhancement mode effect transistor. Switching application.
ORDERING INFORMATION
Type No.
Marking
BL3400
3400
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
30
VGSS ID
IDM PD RθJA
Gate -Source voltage Continuous Drain CurrentA
Pulsed Drain Current a
±12
@ TA = 25 ℃ 5.7 @ TA = 70 ℃ 4.7
25
Power Dissipation
1.4
Thermal resistance,Junction-to-Ambient
70
TJ, Tstg
Junction and Storage Temperature
-55 to +150
Units V V
A A W ℃/W ℃
C273 Rev.A
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Production specification
N-Channel Enhancement Mode Field Effect Transistor BL3400
ELECTRICAL CHARACTER.