Document
Production specification
P-Channel Enhancement Mode Field Effect Transistor BL3435
FEATURES
Electrostatic Sensitive Devices. VDS (V) =- 20V ID = -3.5 A(VGS = -4.5V) RDS(ON) < 70mΩ (VGS = -4.5V)
RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) RDS(ON) < 130mΩ (VGS = -1.5V)
Pb
Lead-free
APPLICATIONS
P-channel enhancement mode effect transistor. Switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
BL3435
3435
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
-20
VGSS ID
IDM PD RθJA
Gate -Source voltage
±8
Continuous Drain CurrentA
@ TA = 25 ℃ @ TA = 70 ℃
Pulsed Drain Current a
Power Dissipation
@ TA = 25 ℃ @ TA = 70 ℃
Thermal resistance,Junction-to-Ambient
-3.5 -2.7
-25
1.4 0.9
70
TJ, Tstg
Junction and Storage Temperature
-55 to +150
Units V V
A A W ℃/W ℃
C302 Rev.A
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Production specification
P-Ch.