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BL3435 Dataheets PDF



Part Number BL3435
Manufacturers GME
Logo GME
Description P-Channel Power Mosfet
Datasheet BL3435 DatasheetBL3435 Datasheet (PDF)

Production specification P-Channel Enhancement Mode Field Effect Transistor BL3435 FEATURES  Electrostatic Sensitive Devices.  VDS (V) =- 20V  ID = -3.5 A(VGS = -4.5V)  RDS(ON) < 70mΩ (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) RDS(ON) < 130mΩ (VGS = -1.5V) Pb Lead-free APPLICATIONS  P-channel enhancement mode effect transistor.  Switching application. SOT-23 ORDERING INFORMATION Type No. Marking BL3435 3435 Package Code SOT-23 MAXIMUM RATING @ Ta=2.

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Production specification P-Channel Enhancement Mode Field Effect Transistor BL3435 FEATURES  Electrostatic Sensitive Devices.  VDS (V) =- 20V  ID = -3.5 A(VGS = -4.5V)  RDS(ON) < 70mΩ (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) RDS(ON) < 130mΩ (VGS = -1.5V) Pb Lead-free APPLICATIONS  P-channel enhancement mode effect transistor.  Switching application. SOT-23 ORDERING INFORMATION Type No. Marking BL3435 3435 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage -20 VGSS ID IDM PD RθJA Gate -Source voltage ±8 Continuous Drain CurrentA @ TA = 25 ℃ @ TA = 70 ℃ Pulsed Drain Current a Power Dissipation @ TA = 25 ℃ @ TA = 70 ℃ Thermal resistance,Junction-to-Ambient -3.5 -2.7 -25 1.4 0.9 70 TJ, Tstg Junction and Storage Temperature -55 to +150 Units V V A A W ℃/W ℃ C302 Rev.A www.gmesemi.com 1 Production specification P-Ch.


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